BUK7Y20-30B NXP Semiconductors, BUK7Y20-30B Datasheet - Page 7

• Manufacturer Part Number: BUK7Y20-30B
• Description: MOSFET, N CH, 30V, 39.5A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y20-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 39.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y20-30B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
fs
I
D
100
35
30
25
20
15
80
60
40
20
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
20
2
15
10
10
4
8
6
20
V
GS
All information provided in this document is subject to legal disclaimers.
8
003aac921
003aac924
(V) = 5
I
V
D
DS
(A)
5.5
6.5
6
(V)
7
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
40
30
20
10
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
4.5
N-channel TrenchMOS standard level FET
5
5.5
20
2
6
T
j
= 175 °C
6.5
40
BUK7Y20-30B
7
4
60
T
8
V
j
= 25 °C
GS
6
© NXP B.V. 2010. All rights reserved.
80
(V) = 20
003aac923
003aac926
V
GS
I
D
(A)
(V)
10
15
100
8
7 of 14