BUK7Y20-30B NXP Semiconductors, BUK7Y20-30B Datasheet - Page 9

• Manufacturer Part Number: BUK7Y20-30B
• Description: MOSFET, N CH, 30V, 39.5A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK7Y20-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 39.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.016ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes

NXP Semiconductors
BUK7Y20-30B
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
(V)
GS
10
8
6
4
2
0
charge; typical values.
0
V
DS
4
= 14 V
8
V
DS
(A)
= 24 V
I
S
80
60
40
20
12
0
0.4
All information provided in this document is subject to legal disclaimers.
Q
003aac927
G
(nC)
16
0.6
T
Rev. 04 — 7 April 2010
j
= 175 °C
0.8
Fig 15. Input, output and reverse transfer capacitances
(pF)
T
C
10
10
j
10
= 25 °C
3
2
10
1
as a function of drain-source voltage; typical
values.
-1
N-channel TrenchMOS standard level FET
003aac920
V
SD
(V)
1.2
1
BUK7Y20-30B
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aac925
C
C
C
(V)
rss
iss
oss
10
2
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