BUK9Y104-100B NXP Semiconductors, BUK9Y104-100B Datasheet
BUK9Y104-100B
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BUK9Y104-100B Summary of contents
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... BUK9Y104-100B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version © NXP B.V. 2010. All rights reserved. ...
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... Figure ° °C mb ≤ 10 ms; pulsed ° ≤ 100 Ω 14 sup °C; unclamped GS j(init) see Figure 2 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET Min Typ Max - - 100 - - 100 - 14 10. -55 - ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. BUK9Y104-100B Product data sheet 003aac524 150 200 T (°C) mb Fig All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET ( Single-pulse and repetitive avalanche rating ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y104-100B Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET Min Typ Max - - 2.53 003aac483 t p δ = ...
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... MHz °C; see Figure Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1.25 1.65 2.15 0 2. 100 - 2 100 - 270 - - ...
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... V (V) DS Fig 6. 003aac958 (A) D Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET 400 2.8 3.2 3.6 3.8 300 2.2 200 100 Drain-source on-state resistance as a function of drain current; typical values. ...
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... R DSON (mΩ) 100 90 80 120 180 ( ° Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET 003aad565 min typ max 003aac956 © ...
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... G Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.6 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET function of drain-source voltage; typical values. 003aac955 = 25 ° 1.4 V (V) SD ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...
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... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET Supersedes BUK9Y104-100B_3 BUK9Y104-100B_2 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y104-100B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK9Y104-100B ...