BUK9Y104-100B NXP Semiconductors, BUK9Y104-100B Datasheet - Page 4

• Manufacturer Part Number: BUK9Y104-100B
• Description: MOSFET, N CH, 100V, 14.8A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y104-100B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14.8A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 0.086ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.65V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y104-100B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
10
10
(A)
I
D
10
20
15
10
-1
2
1
5
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
1
0
Limit R
50
DSon
= V
100
DS
/ I
D
150
All information provided in this document is subject to legal disclaimers.
T
003aac524
mb
10
(°C)
DC
200
Rev. 04 — 7 April 2010
Fig 2.
(A)
I
AL
10
10
10
10
-1
-2
2
1
10
avalanche current as a function of avalanche
time
Single-pulse and repetitive avalanche rating;
-3
10
N-channel TrenchMOS logic level FET
2
10μ s
100μ s
1ms
10ms
100ms
10
-2
BUK9Y104-100B
10
V
-1
DS
(V)
1
© NXP B.V. 2010. All rights reserved.
t
003aac624
AL
003aac503
(1)
(2)
(3)
(ms)
10
10
3
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