BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet
BUK9Y22-30B
Specifications of BUK9Y22-30B
Related parts for BUK9Y22-30B
BUK9Y22-30B Summary of contents
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... BUK9Y22-30B N-channel TrenchMOS logic level FET Rev. 04 — 7 April 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... see DS Simplified outline SOT669 (LFPAK) Description plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET Min ≤ sup = Figure 14 Graphic symbol ...
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... Figure °C mb ≤ 10 µs; pulsed ° ≤ Ω 37 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET Min Typ Max - - - 37 26. 150 59.4 ...
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... T (°C) mb Fig ( All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET 120 100 150 Normalized total power dissipation as a function of mounting base temperature 003aac496 (1) (2) ( (ms) AL 003aab844 200 T (°C) mb © ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration. BUK9Y22-30B Product data sheet = Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET 003aac617 10μ s 100μ s 1ms 10ms 100ms V (V) DS Min Typ Max - - 2.53 003aac483 ...
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... Figure 1.25 Ω Ω R G(ext ° see Figure /dt = -100 A/µ All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 2 500 - 2 100 - 2 100 - ...
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... DSon (mΩ 3.6 3.4 3 2.6 2 (V) DS Fig 7. 003aac966 (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET 120 3 3.4 2 Drain-source on-state resistance as a function of drain current; typical values ( 175 °C ...
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... R DSON (mΩ 120 180 T (°C) j Fig 13. Drain-source on-state resistance as a function of gate-source voltage; typical values. All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET 003aab987 min typ max 003aac964 © NXP B.V. 2010. All rights reserved. ...
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... G Fig 15. Input, output and reverse transfer capacitances 100 175 ° 0.2 0.6 1 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET function of drain-source voltage; typical values. 003aac963 = 25 ° 1.4 V (V) SD 003aac967 ...
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... D max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET detail (1) (1) ( 5.0 3.3 6.2 ...
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... Product data sheet Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET Supersedes BUK9Y22-30B_3 BUK9Y22-30B_2 © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 7 April 2010 BUK9Y22-30B N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 April 2010 Document identifier: BUK9Y22-30B ...