BUK9Y22-30B NXP Semiconductors, BUK9Y22-30B Datasheet - Page 7

• Manufacturer Part Number: BUK9Y22-30B
• Description: MOSFET, N CH, 30V, 37.7A, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of BUK9Y22-30B

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 37.7A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes

NXP Semiconductors
BUK9Y22-30B
Product data sheet
Fig 6.
Fig 8.
g
(S)
(A)
I
fs
D
120
30
20
10
80
40
0
0
function of drain-source voltage; typical values.
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
V
GS
(V) = 15
2
10
10
4
6
20
All information provided in this document is subject to legal disclaimers.
8
I
D
003aac961
003aac966
V
(A)
DS
(V)
3.6
3.4
2.6
2.2
5
4
3
10
30
Rev. 04 — 7 April 2010
Fig 7.
Fig 9.
R
(mΩ)
DSon
(A)
I
D
120
80
40
20
15
10
5
0
0
of drain current; typical values.
function of gate-source voltage; typical values.
Drain-source on-state resistance as a function
Transfer characteristics: drain current as a
0
0
2.6
3
N-channel TrenchMOS logic level FET
3.4
T
j
1
= 175 °C
3.6
40
4
BUK9Y22-30B
2
5
T
j
80
= 25 °C
V
GS
3
(V) = 15
© NXP B.V. 2010. All rights reserved.
I
003aac965
003aac962
V
D
GS
(A)
10
(V)
120
4
7 of 14