PMV20XN NXP Semiconductors, PMV20XN Datasheet - Page 8

• Manufacturer Part Number: PMV20XN
• Description: MOSFET, N CH, 30V, 4.8A, SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMV20XN

• Rohs Compliant: YES
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.019ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1V

NXP Semiconductors
PMV20XN
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Gate-source threshold voltage as a function of
V
GS(th)
(A)
(V)
I
D
2.0
1.5
1.0
0.5
0.0
20
15
10
5
0
–60
function of gate-source voltage; typical values
junction temperature
V
(1) T
(2) T
I
(1) maximum values
(2) typical values
(3) minimum values
0
D
DS
= 0.25 mA; V
> I
j
j
= 25 °C
= 150 °C
D
× R
0
DSon
(1)
1
DS
(1)
(2)
(3)
= V
60
(2)
GS
(2)
2
(1)
120
V
All information provided in this document is subject to legal disclaimers.
GS
017aaa183
017aaa185
T
j
(V)
(°C)
180
3
Rev. 1 — 5 April 2011
Fig 11. Normalized drain-source on-state resistance as
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
a
10
10
1.8
1.4
1.0
0.6
10
3
2
10
–60
a function of junction temperature; typical
values
as a function of drain-source voltage; typical
values
f = 1 MHz; V
(1) C
(2) C
(3) C
–1
iss
oss
rss
30 V, 4.8 A N-channel Trench MOSFET
0
GS
1
= 0 V
60
10
PMV20XN
120
(1)
(2)
(3)
V
© NXP B.V. 2011. All rights reserved.
DS
017aaa184
T
017aaa186
j
(V)
(°C)
180
10
2
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