MT29F1G08ABBDAH4-IT:D Micron Technology Inc, MT29F1G08ABBDAH4-IT:D Datasheet - Page 35

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MT29F1G08ABBDAH4-IT:D

Manufacturer Part Number
MT29F1G08ABBDAH4-IT:D
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F1G08ABBDAH4-IT:D

Cell Type
NAND
Density
8Gb
Interface Type
Parallel
Address Bus
27b
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
VFBGA
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
1.95V
Word Size
8b
Number Of Words
128M
Supply Current
20mA
Mounting
Surface Mount
Pin Count
63
Lead Free Status / Rohs Status
Supplier Unconfirmed

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READ PARAMETER PAGE (ECh)
Figure 26: READ PARAMETER (ECh) Operation
PDF: 09005aef83e5ffed
m68a.pdf – Rev. D 06/10 EN
Cycle type
I/O[7:0]
R/B#
Command
ECh
The READ PARAMETER PAGE (ECh) command is used to read the ONFI parameter
page programmed into the target. This command is accepted by the target only when
all die (LUNs) on the target are idle.
Writing ECh to the command register puts the target in read parameter page mode. The
target stays in this mode until another valid command is issued.
When the ECh command is followed by an 00h address cycle, the target goes busy for
t
the READ MODE (00h) command must be used to re-enable data output mode.
A minimum of three copies of the parameter page are stored in the device. Each param-
eter page is 256 bytes. If desired, the RANDOM DATA READ (05h-E0h) command can be
used to change the location of data output.
R. If the READ STATUS (70h) command is used to monitor for command completion,
Address
00h
t WB
t R
t RR
35
D
P0
OUT
0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
D
P1
1Gb x8, x16: NAND Flash Memory
OUT
0
READ PARAMETER PAGE (ECh)
D
OUT
D
P0
OUT
1
© 2010 Micron Technology, Inc. All rights reserved.
D
P1
OUT
1
D
OUT

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