PSMN2R6-30YLC,115 NXP Semiconductors, PSMN2R6-30YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R6-30YLC,115
• Description: MOSFET Power N-Ch 30V 2.8mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R6-30YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 106 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 39 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 2435pF @ 15V
• Power - Max: 106W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065192115

NXP Semiconductors
Table 7.
PSMN2R6-30YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
100
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise time
reverse recovery fall time
0.5
3.5
4.5
…continued
1
1.5
V
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
GS
All information provided in this document is subject to legal disclaimers.
003a a f 662
(V) =2.4
V
DS
3.0
2.8
2.6
(V)
Conditions
V
T
I
see
I
V
V
dI
see
S
S
j
GS
GS
GS
2
S
= 25 °C
= 25 A; V
= 25 A; dI
Rev. 01 — 2 May 2011
/dt = -100 A/µs; V
Figure 17
Figure 18
= 0 V; V
= 0 V; V
= 0 V; I
GS
S
S
DS
DS
/dt = -100 A/µs;
= 25 A;
Fig 7.
= 0 V; T
= 15 V; f = 1 MHz;
= 15 V
R
(mΩ)
DS on
DS
7.5
2.5
10
5
0
j
of gate-source voltage; typical values
Drain-source on-state resistance as a function
= 15 V;
= 25 °C;
0
4
PSMN2R6-30YLC
Min
-
-
-
-
-
-
8
Typ
17
0.8
33
31
20
13
12
© NXP B.V. 2011. All rights reserved.
003a a f 663
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
7 of 15