PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet

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PSMN2R6-60PSQ

Manufacturer Part Number
PSMN2R6-60PSQ
Description
MOSFET N-Channel MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN2R6-60PSQ.pdf (13 pages)

Specifications of PSMN2R6-60PSQ

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
150 A
Resistance Drain-source Rds (on)
5.6 mOhms
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
58 ns
Gate Charge Qg
140 nC
Power Dissipation
326 W
Rise Time
50 ns
Typical Turn-off Delay Time
87 ns
Scan or click this QR code to view the latest information for this product
1. General description
2. Features and benefits
3. Applications
4. Quick reference data
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
D
DS
tot
DSon
G(tot)
GD
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
total gate charge
gate-drain charge
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
•
•
•
•
•
•
•
[1]
PSMN2R6-60PS
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
5 February 2013
High efficiency due to low switching & conduction losses
Robust construction for demanding applications
Standard level gate
Battery-powered tools
Load switching
Motor control
Uninterruptible power supplies
Continuous current is limited by package.
Conditions
T
V
T
V
Fig. 11
I
Fig.
D
j
mb
GS
GS
≥ 25 °C; T
= 25 A; V
= 25 °C;
13;
= 10 V; T
= 10 V; I
Fig. 14
DS
j
D
Fig. 2
≤ 175 °C
mb
= 48 V; V
= 25 A; T
= 25 °C;
j
GS
= 25 °C;
Fig. 1
= 10 V;
[1]
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
1.97
140
43.7
Max
60
150
326
2.6
-
-
Unit
V
A
W
mΩ
nC
nC

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PSMN2R6-60PSQ Summary of contents

Page 1

... PSMN2R6-60PS N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 5 February 2013 1. General description Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits • High efficiency due to low switching & conduction losses • ...

Page 2

... kΩ ° 100 ° °C; pulsed; t ≤ 10 µ All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS Graphic symbol mbb076 Version SOT78 Min Max - -20 20 Fig 150 [1] Fig. 1 ...

Page 3

... GS j(init) Fig. 3 003aak809 120 P der (%) 120 150 180 T (°C) j Fig. 2. All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS Min - - ° Ω 100 150 T Normalized total power dissipation as a function of mounting base temperature © NXP B.V. 2013. All rights reserved ...

Page 4

... Limit R Limit DSon DSon Conditions Fig. 5 vertical in still air All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS 003aak810 (ms Min Typ - 0. © NXP B.V. 2013. All rights reserved 003aak811 ...

Page 5

... 175 ° Fig. 11; Fig MHz Fig. 13; Fig. 14 All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS 003aah663 t P δ (s) p Min Typ Max ...

Page 6

... V DS 003aah664 DSon (m Ω 5 ( (V) DS Fig. 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS Min Typ - 43.7 - 7629 - 968 - 591 - Fig 0. ...

Page 7

... V (V) GS Fig. 9. 003aah028 R DSon (m Ω ) max (V) GS Fig. 11. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS 5 max 4 typ 3 2 min 120 Gate-source threshold voltage as a function of junction temperature 15 5 5.5 10 ...

Page 8

... Fig. 13. Gate charge waveform definitions 120 180 T ( ° 003aah672 (pF 48V DS 100 150 Q (nC) G Fig. 15. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 400 I S (A) 300 200 T = 175 ° 100 0 0 0.3 0.6 All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS 003aah674 ° 0.9 1.2 V (V) SD © NXP B.V. 2013. All rights reserved ...

Page 10

... 1.3 0.7 16.0 6.6 10.3 2.54 1.0 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS mounting base ( max. 15.0 3.30 3.8 3.0 2.6 3.0 12.8 2.79 3.5 2.7 2.2 EUROPEAN PROJECTION SOT78 ISSUE DATE ...

Page 11

... NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS © NXP B.V. 2013. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PSMN2R6-60PS Product data sheet N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS © NXP B.V. 2013. All rights reserved ...

Page 13

... For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 February 2013 PSMN2R6-60PS Product data sheet N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 All information provided in this document is subject to legal disclaimers. 5 February 2013 PSMN2R6-60PS © NXP B.V. 2013. All rights reserved ...

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