PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 3

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
PSMN2R6-60PS
Product data sheet
Symbol
Fig. 1.
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
S
SM
stg
j
sld(M)
tot
DS(AL)S
(A)
(A)
I
I
D
D
250
200
150
100
(1) Capped at 150A due to package
Continuous drain current as a function of
mounting base temperature
50
0
0
Parameter
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
30
[1]
(1)
(1)
60
Continuous current is limited by package.
90
120
All information provided in this document is subject to legal disclaimers.
T
j
150
(°C)
003aak809
Conditions
T
T
pulsed; t
I
V
Fig. 3
D
180
mb
mb
GS
= 150 A; V
5 February 2013
= 25 °C;
= 25 °C
= 60 V; T
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
p
≤ 10 µs; T
Fig. 2.
sup
Fig. 2
j(init)
≤ 60 V; R
P
(%)
der
= 25 °C; unclamped;
120
80
40
mb
0
Normalized total power dissipation as a
function of mounting base temperature
0
= 25 °C
GS
= 50 Ω;
50
100
[1]
PSMN2R6-60PS
Min
-
-55
-55
-
-
-
-
150
© NXP B.V. 2013. All rights reserved
T
mb
03aa16
Max
(°C)
326
175
175
260
150
961
411
200
Unit
W
°C
°C
°C
A
A
mJ
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