PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 6

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
PSMN2R6-60PS
Product data sheet
Symbol
Fig. 6.
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
SD
iss
oss
rss
GD
r
(A)
I
400
300
200
100
D
0
T
Output characteristics; drain current as a
function of drain-source voltage; typical values
0
j
= 25 °C; t
Parameter
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
0.5
p
10
= 300 μs
8
1
V
1.5
GS
Conditions
All information provided in this document is subject to legal disclaimers.
V
T
V
R
I
I
V
S
S
(V) = 4.5
003aah664
V
j
GS
DS
DS
G(ext)
= 25 °C;
= 25 A; V
= 20 A; dI
DS
= 45 V; R
= 25 V
(V)
= 0 V; V
5.5
6
= 5 Ω
5
2
Fig. 15
GS
S
5 February 2013
DS
/dt = -100 A/µs; V
L
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
= 0 V; T
= 1.8 Ω; V
= 25 V; f = 1 MHz;
Fig. 7.
j
= 25 °C;
R
(m Ω )
GS
DSon
15
10
= 10 V;
5
0
Drain-source on-state resistance as a function
of gate-source voltage; typical values
0
GS
Fig. 16
= 0 V;
5
Min
-
-
-
-
-
-
-
-
-
-
-
10
PSMN2R6-60PS
Typ
43.7
7629
968
591
32
50
87
58
0.78
44
67
15
© NXP B.V. 2013. All rights reserved
003aah665
V
GS
Max
-
-
-
-
-
-
-
-
1.2
-
-
(V)
20
Unit
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
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