PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 10

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PSMN2R6-60PSQ

Manufacturer Part Number
PSMN2R6-60PSQ
Description
MOSFET N-Channel MOSFET
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN2R6-60PSQ

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
150 A
Resistance Drain-source Rds (on)
5.6 mOhms
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
58 ns
Gate Charge Qg
140 nC
Power Dissipation
326 W
Rise Time
50 ns
Typical Turn-off Delay Time
87 ns
NXP Semiconductors
11. Package outline
PSMN2R6-60PS
Product data sheet
Fig. 17. Package outline TO-220AB (SOT78)
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
UNIT
mm
VERSION
OUTLINE
SOT78
4.7
4.1
A
1.40
1.25
A
1
0.9
0.6
b
IEC
b
1.6
1.0
1
(2)
D
L
b
L
1.3
1.0
2
D
1
(2)
(1)
1
b
b
3-lead TO-220AB
(3×)
(2×)
1
2
(2)
(2)
0.7
0.4
JEDEC
c
All information provided in this document is subject to legal disclaimers.
1
16.0
15.2
REFERENCES
e
D
E
p
2
e
6.6
5.9
D
0
1
5 February 2013
3
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
10.3
JEITA
SC-46
b(3×)
9.7
E
L
scale
2
q
5
(1)
2.54
e
15.0
12.8
10 mm
L
mounting
L
3.30
2.79
base
1
(1)
max.
L
3.0
2
(1)
Q
A
3.8
3.5
p
A
PROJECTION
EUROPEAN
1
c
3.0
2.7
q
PSMN2R6-60PS
2.6
2.2
Q
© NXP B.V. 2013. All rights reserved
ISSUE DATE
08-04-23
08-06-13
SOT78
10 / 13

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