PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 8

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
PSMN2R6-60PS
Product data sheet
Fig. 12. Normalized drain-source on-state resistance
Fig. 14. Gate-source voltage as a function of gate
V
a
(V)
2.4
1.8
1.2
0.6
GS
10
0
8
6
4
2
0
factor as a function of junction temperature
charge; typical values
-60
0
0
14 V
50
60
100
V
120
DS
Q
= 48V
All information provided in this document is subject to legal disclaimers.
G
003aah672
003aag814
T
(nC)
j
( ° C)
180
150
5 February 2013
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
Fig. 13. Gate charge waveform definitions
Fig. 15. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
PSMN2R6-60PS
G(tot)
Q
GD
10
V
© NXP B.V. 2013. All rights reserved
DS
003aah673
003aaa508
(V)
C
C
C
oss
rss
iss
10
2
8 / 13