PSMN2R6-60PSQ NXP Semiconductors, PSMN2R6-60PSQ Datasheet - Page 9

• Manufacturer Part Number: PSMN2R6-60PSQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R6-60PSQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 58 ns
• Gate Charge Qg: 140 nC
• Power Dissipation: 326 W
• Rise Time: 50 ns
• Typical Turn-off Delay Time: 87 ns

NXP Semiconductors
PSMN2R6-60PS
Product data sheet
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
400
I
300
200
100
S
0
0
All information provided in this document is subject to legal disclaimers.
0.3
5 February 2013
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
T
j
= 175 ° C
0.6
0.9
T
003aah674
V
j
= 25 ° C
SD
(V)
1.2
PSMN2R6-60PS
© NXP B.V. 2013. All rights reserved
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