PSMN2R9-25YLC,115 NXP Semiconductors, PSMN2R9-25YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN2R9-25YLC,115
• Description: MOSFET Power N-Ch 25V 3.15 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN2R9-25YLC,115

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.15 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 92 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: LFPAK
• Gate Charge Qg: 33 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.15 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 1.95V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 2083pF @ 12V
• Power - Max: 92W
• Mounting Type: Surface Mount
• Lead Free Status / Rohs Status: Details
• Other names: 934065202115

NXP Semiconductors
Table 7.
PSMN2R9-25YLC
Product data sheet
Symbol
Q
Source-drain diode
V
t
Q
t
t
rr
a
b
Fig 6.
SD
oss
r
(A)
I
100
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
10
Characteristics
3.5
Parameter
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
4.5
1
…continued
3.0
2
3
V
Conditions
V
T
I
see
I
V
V
V
GS
All information provided in this document is subject to legal disclaimers.
S
S
003a a f 798
j
GS
DS
GS
DS
V
= 25 °C
= 25 A; V
= 25 A; dI
(V) =
DS
Figure 17
= 12 V
= 12 V; see
= 0 V; V
= 0 V; I
(V)
2.8
2.6
2.4
2.2
4
Rev. 1 — 2 May 2011
N-channel 25 V 3.15 mΩ logic level MOSFET in LFPAK using
S
GS
S
DS
/dt = -100 A/µs; V
= 25 A; dI
= 0 V; T
= 12 V; f = 1 MHz;
Figure 18
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(mΩ)
DS on
10
8
6
4
2
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN2R9-25YLC
Min
-
-
-
-
-
-
8
Typ
18.5
0.8
32
23
18
14
12
© NXP B.V. 2011. All rights reserved.
003a a f 799
V
GS
Max
-
1.1
-
-
-
-
(V)
16
Unit
nC
V
ns
nC
ns
ns
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