PSMN3R7-30YLC,115 NXP Semiconductors, PSMN3R7-30YLC,115 Datasheet - Page 4
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PSMN3R7-30YLC,115
Manufacturer Part Number
PSMN3R7-30YLC,115
Description
MOSFET Power N-Ch 30V 3.95mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R7-30YLC115.pdf
(15 pages)
Specifications of PSMN3R7-30YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.95 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.95 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1848pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065194115
NXP Semiconductors
PSMN3R7-30YLC
Product data sheet
Fig 3.
Fig 4.
(A)
I
D
10
10
10
10
10
-1
4
3
2
1
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
(A)
I
10
10
AL
10
10
-1
DSon
3
2
1
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
10
All information provided in this document is subject to legal disclaimers.
-3
= V
1
DS
/ I
D
10
Rev. 01 — 2 May 2011
-2
10
-1
(2)
(1)
DC
1
t
003a a f 691
AL
(ms )
10
10
PSMN3R7-30YLC
V
DS
(V)
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
© NXP B.V. 2011. All rights reserved.
003aaf678
10
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