PSMN3R7-30YLC,115 NXP Semiconductors, PSMN3R7-30YLC,115 Datasheet - Page 6
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PSMN3R7-30YLC,115
Manufacturer Part Number
PSMN3R7-30YLC,115
Description
MOSFET Power N-Ch 30V 3.95mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN3R7-30YLC115.pdf
(15 pages)
Specifications of PSMN3R7-30YLC,115
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.95 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
79 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
LFPAK
Gate Charge Qg
29 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.95 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
1.95V @ 1mA
Gate Charge (qg) @ Vgs
29nC @ 10V
Input Capacitance (ciss) @ Vds
1848pF @ 15V
Power - Max
79W
Mounting Type
Surface Mount
Lead Free Status / Rohs Status
Details
Other names
934065194115
NXP Semiconductors
7. Characteristics
Table 7.
PSMN3R7-30YLC
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold gate-source
charge
post-threshold gate-source
charge
gate-drain charge
gate-source plateau voltage
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
N-channel 30 V 3.95mΩ logic level MOSFET in LFPAK using NextPower
All information provided in this document is subject to legal disclaimers.
Conditions
I
I
see
I
I
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
I
see
I
see
V
T
V
R
D
D
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C; see
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 10 mA; V
= 1 mA; V
= 20 A; V
= 20 A; V
= 0 A; V
= 20 A; V
= 20 A; V
Rev. 01 — 2 May 2011
Figure
Figure 12
Figure
Figure 12
Figure
Figure
Figure
Figure
Figure 15
= 30 V; V
= 30 V; V
= 15 V; V
= 15 V; R
= 16 V; V
= -16 V; V
= 4.5 V; I
= 4.5 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω
DS
10; see
12; see
12; see
14; see
14; see
14; see
DS
DS
DS
DS
DS
DS
D
D
= 0 V; V
D
D
L
DS
GS
GS
GS
DS
GS
GS
DS
= 20 A; T
= 20 A; T
= 15 V; V
= 15 V; V
= 15 V; V
= 15 V; see
= 0.75 Ω; V
= V
= V
= 20 A; T
= 20 A; T
Figure 16
= V
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
GS
GS
Figure 11
Figure 13
Figure 13
Figure 15
Figure 15
Figure 15
GS
; T
; T
GS
; T
j
j
j
j
GS
GS
GS
= 10 V
j
j
j
j
j
= 25 °C;
= -55 °C
= 25 °C;
= 150 °C;
j
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C;
= 150 °C;
= 150 °C
= 25 °C
= -55 °C
= 25 °C
GS
Figure
= 10 V;
= 4.5 V;
= 4.5 V;
= 4.5 V;
14;
PSMN3R7-30YLC
Min
30
27
1.05
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.58
-
-
-
-
-
-
4.25
-
3.3
-
1.6
29
14
27
4.6
2.9
1.7
4.2
2.8
1848
380
132
21
19
30
12
© NXP B.V. 2011. All rights reserved.
-
Max
-
-
1.95
-
2.25
1
100
100
100
5.15
8.5
3.95
6.55
3.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
ns
ns
ns
ns
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