PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 8

• Manufacturer Part Number: PSMN4R3-80ES,127
• Description: MOSFET Power N-Ch 80V 4.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R3-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 104 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 111nC @ 10V
• Input Capacitance (ciss) @ Vds: 8161pF @ 40V
• Power - Max: 306W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065164127

NXP Semiconductors
PSMN4R3-80ES
Product data sheet
Fig 9.
Fig 11. Sub-threshold drain current as a function of
(A)
(pF)
I
10
10
10
10
10
10
D
10
C
10
10
10
−1
−2
−3
−4
−5
−6
5
4
3
2
10
function of gate-source voltage; typical values
gate-source voltage
Input and reverse transfer capacitances as a
0
-1
1
2
min
typ
10
4
max
V
V
GS
All information provided in this document is subject to legal disclaimers.
GS
003aaf623
C
C
(V)
iss
rss
(V)
03aa35
10
6
Rev. 02 — 18 April 2011
2
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normailzed drain-source on-state resistance
V
GS(th)
(V)
2.4
1.8
1.2
0.6
a
5
4
3
2
1
0
3
0
−60
-60
junction temperature
factor as a function of junction temperature
0
0
PSMN4R3-80ES
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
003aad280
T
003aaf608
j
j
(°C)
( ° C)
180
180
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