PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN4R3-80ES,127
• Description: MOSFET Power N-Ch 80V 4.3 mOhms
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PSMN4R3-80ES,127

• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.3 mOhms
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 306 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: I2PAK
• Gate Charge Qg: 104 nC
• Minimum Operating Temperature: - 55 C
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 111nC @ 10V
• Input Capacitance (ciss) @ Vds: 8161pF @ 40V
• Power - Max: 306W
• Mounting Type: Through Hole
• Lead Free Status / Rohs Status: Details
• Other names: 934065164127

NXP Semiconductors
PSMN4R3-80ES
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
7.5
2.5
18
12
10
6
0
5
0
of drain current; typical values
charge; typical values
0
0
20
30
V
DS
= 16V
4.4
40V
60
40
64V
V
GS
(V) = 4.5
60
90
All information provided in this document is subject to legal disclaimers.
Q
003aaf628
003aaf625
I
G
D
6.0
20.0
(A)
(nC)
120
80
Rev. 02 — 18 April 2011
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN4R3-80ES
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2011. All rights reserved.
V
DS
003aaa508
003aaf626
(V)
C
C
C
oss
rss
iss
10
2
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