PSMN4R3-80ES,127 NXP Semiconductors, PSMN4R3-80ES,127 Datasheet - Page 9
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PSMN4R3-80ES,127
Manufacturer Part Number
PSMN4R3-80ES,127
Description
MOSFET Power N-Ch 80V 4.3 mOhms
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PSMN4R3-80ES127.pdf
(15 pages)
Specifications of PSMN4R3-80ES,127
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.3 mOhms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
120 A
Power Dissipation
306 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
I2PAK
Gate Charge Qg
104 nC
Minimum Operating Temperature
- 55 C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
111nC @ 10V
Input Capacitance (ciss) @ Vds
8161pF @ 40V
Power - Max
306W
Mounting Type
Through Hole
Lead Free Status / Rohs Status
Details
Other names
934065164127
NXP Semiconductors
PSMN4R3-80ES
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
7.5
2.5
18
12
10
6
0
5
0
of drain current; typical values
charge; typical values
0
0
20
30
V
DS
= 16V
4.4
40V
60
40
64V
V
GS
(V) = 4.5
60
90
All information provided in this document is subject to legal disclaimers.
Q
003aaf628
003aaf625
I
G
D
6.0
20.0
(A)
(nC)
120
80
Rev. 02 — 18 April 2011
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN4R3-80ES
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2011. All rights reserved.
V
DS
003aaa508
003aaf626
(V)
C
C
C
oss
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iss
10
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