BUK7508-55A NXP Semiconductors, BUK7508-55A Datasheet - Page 11

• Manufacturer Part Number: BUK7508-55A
• Description: MOSFET Power RAIL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BUK7508-55A

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.008 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 126 A
• Power Dissipation: 254 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details
• Other names: BUK7508-55A,127

NXP Semiconductors
8. Revision history
Table 7.
BUK7508-55A
Product data sheet
Document ID
BUK7508-55A v.3
Modifications:
BUK7508_7608_55A v.2 20020117
Revision history
Release date
20100614
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•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK7508-55A separated from data sheet BUK7508_7608_55A v.2.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 03 — 14 June 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
BUK7508-55A
-
Supersedes
BUK7508_7608_55A v.2
© NXP B.V. 2010. All rights reserved.
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