BUK7508-55A NXP Semiconductors, BUK7508-55A Datasheet - Page 4
![MOSFET Power RAIL MOSFET](/photos/16/4/160465/to3_sml.jpg)
BUK7508-55A
Manufacturer Part Number
BUK7508-55A
Description
MOSFET Power RAIL MOSFET
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7508-55A.pdf
(14 pages)
Specifications of BUK7508-55A
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.008 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
126 A
Power Dissipation
254 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Other names
BUK7508-55A,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BUK7508-55A
Manufacturer:
HONGFA
Quantity:
43 000
Company:
Part Number:
BUK7508-55A
Manufacturer:
NXP
Quantity:
42 000
NXP Semiconductors
BUK7508-55A
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
140
120
100
80
60
40
20
0
25
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Capped at 75 A due to package
50
(A)
I
75
D
10
10
10
1
3
2
1
Capped at 75 A due to package
100
125
R
DSon
150
= V
T
All information provided in this document is subject to legal disclaimers.
mb
DS
175
(°C)
/ I
03nh50
D
200
Rev. 03 — 14 June 2010
DC
10
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
N-channel TrenchMOS standard level FET
V
DS
50
(V)
t
p
100 μs
10 ms
100 ms
1 ms
BUK7508-55A
100
= 10 μs
03nh48
10
2
150
© NXP B.V. 2010. All rights reserved.
T
mb
03na19
(°C)
200
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