BUK7506-75B NXP Semiconductors, BUK7506-75B Datasheet

MOSFET Power HIGH PERF TRENCHMOS

BUK7506-75B

Manufacturer Part Number
BUK7506-75B
Description
MOSFET Power HIGH PERF TRENCHMOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BUK7506-75B

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0056 Ohms
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
159 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
BUK7506-75B,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7506-75B
Manufacturer:
PHILIPS
Quantity:
15 000
Part Number:
BUK7506-75B
Manufacturer:
NXP
Quantity:
51 000
Part Number:
BUK7506-75B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
P
Static characteristics
R
I
D
DS
tot
DSon
BUK7506-75B
N-channel TrenchMOS standard level FET
Rev. 03 — 9 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 175 °C
mb
= 25 A;
Figure
= 25 °C;
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
4.8
Max Unit
75
75
300
5.6
V
A
W
mΩ

Related parts for BUK7506-75B

BUK7506-75B Summary of contents

Page 1

... BUK7506-75B N-channel TrenchMOS standard level FET Rev. 03 — 9 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... see Figure 13 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET Min ≤ sup = °C; j Graphic symbol G mbb076 ...

Page 3

... sup °C; unclamped GS j(init) 03ng89 120 P der (%) 150 175 200 T (°C) mb Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET Min - - -20 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µ -55 -55 [ ° Ω ...

Page 4

... V /I DSon DS D Capped due to package 1 Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET 03ng87 = 10 μ 100 μ 100 (V) DS Min Typ ...

Page 5

... °C j from source lead to source bond pad ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B Min Typ Max Unit 4 0.02 1 µ 500 µ ...

Page 6

... (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET 8 DSon ° Drain-source on-state resistance as a function of gate-source voltage; typical values 120 g fs (S) 100 ...

Page 7

... Fig 10. Gate-source threshold voltage as a function of 03ng99 2.4 a 1.6 0 6.5 10 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 120 junction temperature 0 −60 ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET 8000 C (pF) C iss 6000 4000 C oss 2000 C rss 0 − function of drain-source voltage ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7506-75B separated from data sheet BUK75_7606_75B v.2. BUK75_7606_75B v.2 20020920 (9397 750 10278) BUK7506-75B ...

Page 11

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 9 February 2011 BUK7506-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 9 February 2011 Document identifier: BUK7506-75B ...

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