BUK7506-55B NXP Semiconductors, BUK7506-55B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7506-55B

Manufacturer Part Number
BUK7506-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
BUK7506-55B
N-channel TrenchMOS standard level FET
Rev. 02 — 21 June 2010
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Product data sheet

Related parts for BUK7506-55B

BUK7506-55B Summary of contents

Page 1

... BUK7506-55B N-channel TrenchMOS standard level FET Rev. 02 — 21 June 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET Min ≤ 175 ° [ ° Figure 3 ...

Page 3

... ° ≤ Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B Min Typ Max - - - [ 145 [ ...

Page 4

... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET 0 50 100 150 T Normalized total power dissipation as a function of mounting base temperature ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7506-55B Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure 4 vertical in still air −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B Min Typ Max - - 0. 03nl97 t P δ = ...

Page 6

... ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B Min Typ Max Unit 4 ...

Page 7

... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET 12 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... Label 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03nl88 = 25 ° ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7506-55B separated from data sheet BUK75_7606_55B v.1. BUK75_7606_55B v.1 20030331 BUK7506-55B Product data sheet ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 June 2010 BUK7506-55B N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 June 2010 Document identifier: BUK7506-55B ...

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