BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet

MOSFET N-CH 55V 75A SOT78

BUK7506-55A,127

Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK7506-55A,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
 Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1
2
3
mb
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
Pinning - SOT78, SOT404, simplified outline and symbol
c
c
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK7506-55A in SOT78 (TO-220AB)
BUK7606-55A in SOT404
BUK7506-55A; BUK7606-55A
TrenchMOS™ standard level FET
Rev. 02 — 03 July 2001
TrenchMOS™ technology
Q101 compliant
175 C rated
Standard level compatible.
Automotive and general purpose power switching:
12 V and 24 V loads
Motors, lamps and solenoids.
Simplified outline
SOT78 (TO-220AB)
1 2
mb
3
MBK106
(D
2
-PAK).
SOT404 (D
1
mb
2
3
2
-PAK)
MBK116
Symbol
MBB076
g
Product data
d
s

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BUK7506-55A,127 Summary of contents

Page 1

... TrenchMOS™ standard level FET Rev. 02 — 03 July 2001 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK7506-55A in SOT78 (TO-220AB) BUK7606-55A in SOT404 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Standard level compatible ...

Page 2

... Source-drain diode I reverse drain current (DC pulsed reverse drain current DRM Avalanche ruggedness W non-repetitive avalanche energy DSS [1] Current is limited by power dissipation chip rating [2] Continuous current is limited by package 9397 750 08421 Product data BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET Conditions ...

Page 3

... I D (A) R DSon = Capped due to package single pulse Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 180 03na19 I D (A) 160 140 120 100 150 175 200 4 der Fig 2. Continuous drain current as a function of mounting base temperature ...

Page 4

... Single Shot Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A Conditions vertical in still air; SOT78 package mounted on printed circuit board; minimum footprint; SOT404 package Figure Rev. 02 — 03 July 2001 TrenchMOS™ ...

Page 5

... C output capacitance oss C reverse transfer capacitance rss t turn-on delay time d(on) t rise time r t turn-off delay time d(off) t fall time f L internal drain inductance d L internal source inductance s 9397 750 08421 Product data BUK7506-55A; BUK7606-55A Conditions Min I = 0. Figure ...

Page 6

... Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values DSon ( ( Fig 7. Drain-source on-state resistance as a function of drain current; typical values. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A Conditions Figure /dt = 100 03nf29 8.5 R DSon (m ) 7.5 7.5 6.5 6.5 5 ...

Page 7

... Fig 9. Gate-source threshold voltage as a function of junction temperature ( Fig 11. Forward transconductance as a function of drain current; typical values. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 03aa32 (A) max. typ. min 100 140 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03nf26 C 9000 (pF) 8000 7000 6000 ...

Page 8

... Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 03nf27 ( ( Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. 100 ...

Page 9

... L DIMENSIONS (mm are the original dimensions UNIT A 1 4.5 1.39 0.9 1.3 mm 4.1 1.27 0.7 1.0 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION IEC SOT78 Fig 16. SOT78 (TO-220AB). 9397 750 08421 Product data BUK7506-55A; BUK7606-55A mounting scale 0.7 15.8 6.4 10 ...

Page 10

... DIMENSIONS (mm are the original dimensions UNIT c 4.50 1.40 0.85 0.64 mm 4.10 1.27 0.60 0.46 OUTLINE VERSION IEC SOT404 2 Fig 17. SOT404 (D -PAK). 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14 ...

Page 11

... Philips Semiconductors 10. Soldering handbook, full pagewidth 8.35 8.15 4.85 7.95 Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404. 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 solder lands solder resist 5 ...

Page 12

... Table 6: Revision history Rev Date CPCN Description 02 20010703 - Product Specification; second version; supersedes Rev 19981217. • Combined BUK7506-55A and BUK7606-55A into one data sheet. Updated Figure 01 19981217 - Product Specification; initial versions 9397 750 08421 Product data BUK7506-55A; BUK7606-55A 3, and Figure 4 ...

Page 13

... Product data BUK7506-55A; BUK7606-55A Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. ...

Page 14

... Building BE, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 272 4825 9397 750 08421 Product data BUK7506-55A; BUK7606-55A TrenchMOS™ standard level FET Netherlands: Tel. +31 40 278 2785, Fax. +31 40 278 8399 New Zealand: Tel. + 4160, Fax. + 7811 Norway: Tel. + 8000, Fax. + 8341 Philippines: Tel ...

Page 15

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 03 July 2001 Document order number: 9397 750 08421 BUK7506-55A; BUK7606-55A Printed in The Netherlands TrenchMOS™ standard level FET ...

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