BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 9
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK7506-55A,127
Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-55A127.pdf
(15 pages)
Specifications of BUK7506-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
BUK7506-55A
BUK7506-55A
9. Package outline
Fig 16. SOT78 (TO-220AB).
Philips Semiconductors
9397 750 08421
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
2
e
D 1
6.4
5.9
Rev. 02 — 03 July 2001
0
3
b
BUK7506-55A; BUK7606-55A
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
TrenchMOS™ standard level FET
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
p
3.0
2.7
© Philips Electronics N.V. 2001. All rights reserved.
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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