BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 4
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK7506-55A,127
Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-55A127.pdf
(15 pages)
Specifications of BUK7506-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
BUK7506-55A
BUK7506-55A
7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 08421
Product data
Symbol
R
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-a)
th(j-mb)
Thermal characteristics
Z th(j-mb)
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
1
10 -6
0.2
0.02
0.1
0.05
= 0.5
Single Shot
7.1 Transient thermal impedance
10 -5
10 -4
Rev. 02 — 03 July 2001
BUK7506-55A; BUK7606-55A
Conditions
vertical in still air; SOT78 package
mounted on printed circuit board;
minimum footprint; SOT404
package
Figure 4
10 -3
10 -2
TrenchMOS™ standard level FET
10 -1
P
t p
© Philips Electronics N.V. 2001. All rights reserved.
T
t p (s)
=
Value
60
50
0.5
03nf33
t p
T
t
1
Unit
K/W
K/W
K/W
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