BUK7506-55A,127 NXP Semiconductors, BUK7506-55A,127 Datasheet - Page 2
![MOSFET N-CH 55V 75A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
BUK7506-55A,127
Manufacturer Part Number
BUK7506-55A,127
Description
MOSFET N-CH 55V 75A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK7506-55A127.pdf
(15 pages)
Specifications of BUK7506-55A,127
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
6000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220AB-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0063 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
154 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Details
Other names
934055407127
BUK7506-55A
BUK7506-55A
BUK7506-55A
BUK7506-55A
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Philips Semiconductors
9397 750 08421
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
[1]
[2]
Current is limited by power dissipation chip rating
Continuous current is limited by package
Conditions
T
T
V
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
Rev. 02 — 03 July 2001
mb
mb
mb
mb
mb
mb
mb
mb
GS
DS
T
T
GS
j
j
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 10 V; I
= 25 C
= 175 C
BUK7506-55A; BUK7606-55A
= 20 k
55 V; V
and
mb
= 25 C
D
3
Figure 1
GS
GS
GS
= 25 A
GS
= 10 V; R
= 10 V
= 10 V;
= 10 V;
p
p
10 s;
10 s
GS
Figure 2
D
= 75 A;
= 50 ;
TrenchMOS™ standard level FET
[1]
[1]
[2]
[2]
[1]
[2]
Typ
5.3
Min
55
55
© Philips Electronics N.V. 2001. All rights reserved.
Max
55
154
300
175
6.3
13.2
Max
55
55
154
75
75
616
300
+175
+175
154
75
616
1.1
20
Unit
V
A
W
m
m
Unit
V
V
V
A
A
A
A
W
A
A
A
J
C
C
C
2 of 15