BUK7506-55B NXP Semiconductors, BUK7506-55B Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7506-55B

Manufacturer Part Number
BUK7506-55B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK7506-55B
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−6
0.1
0.05
0.2
0.02
Thermal characteristics
single shot
δ = 0.5
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
−5
Conditions
see
vertical in still air
All information provided in this document is subject to legal disclaimers.
10
−4
Figure 4
Rev. 02 — 21 June 2010
10
−3
N-channel TrenchMOS standard level FET
10
−2
BUK7506-55B
Min
-
-
10
P
−1
Typ
-
-
t
p
T
t
© NXP B.V. 2010. All rights reserved.
p
(s)
δ =
Max
0.59
60
03nl97
t
T
t
p
1
Unit
K/W
K/W
5 of 14

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