MTP3055E STMicroelectronics, MTP3055E Datasheet

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MTP3055E

Manufacturer Part Number

MTP3055E

Description

MOSFET Power TO-220 N-CH 60V 14A

Manufacturer

STMicroelectronics

Datasheets

1.MTP3055E.pdf (8 pages)

2.MTP3055E.pdf (8 pages)

Specifications of MTP3055E

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.1 Ohms

Forward Transconductance Gfs (max / Min)

6 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12 A

Power Dissipation

40 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220

Minimum Operating Temperature

- 65 C

Lead Free Status / Rohs Status

No

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

MTP3055E

Manufacturer:

ST

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

MTP3055E

Manufacturer:

MOT/ON

Quantity:

12 500

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

MTP3055E

Manufacturer:

ST

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APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

First digit of the datecode being Z or K identifies silicon

characterized in this datasheet

August 2002

MTP3055E

TYPICAL R

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

175°C OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

Symbol

I

V

DM

P

V

V

T

I

DGR

Dm

TOT

I

T

stg

DS

GS

D

TYPE

j

( )

Drain-source Voltage (V

Drain-gate Voltage (R

Gate- source Voltage

Drain Current (continuous) at T

Drain Current (pulsed) at T

Drain Current (pulsed)

Total Dissipation at T

Storage Temperature

Max. Operating Junction Temperature

DS

(on) = 0.1

V

60 V

DSS

< 0.15

R

DS(on)

C

GS

Parameter

= 25°C

GS

= 20 k )

C

= 0)

= 100°C

N-CHANNEL 60V - 0.1 - 12A TO-220

C

12 A

= 25°C

I

D

STripFET™ POWER MOSFET

INTERNAL SCHEMATIC DIAGRAM

–65 to 175

TO-220

Value

±20

175

60

60

12

48

40

9

MTP3055E

1

2

3

Unit

°C

°C

W

V

V

V

A

A

A

1/8

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