MTP3055E STMicroelectronics, MTP3055E Datasheet - Page 3

• Manufacturer Part Number: MTP3055E
• Description: MOSFET Power TO-220 N-CH 60V 14A
• Manufacturer: STMicroelectronics

Specifications of MTP3055E

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Minimum Operating Temperature: - 65 C
• Lead Free Status / Rohs Status: No

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING RESISTIVE LOAD
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Safe Operating Area
Symbol
Symbol
I
V
SDM
t
t
SD
d(on)
d(off)
Q
Q
I
2. Pulse width limited by safe operating area.
Q
Q
SD
t
t
t
rr
gs
gd
r
f
g
rr
(1)
(2)
Turn-on Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
V
R
(see test circuit)
V
(see test circuit)
I
I
V
I
SD
SD
D
DD
DD
DD
G
= 12 A,V
= 50 V
= 12 A, V
= 12 A, di/dt = 100 A/µs,
= 30 V, I
= 40V
= 30 V, T
Test Conditions
Test Conditions
GS
GS
D
GS
j
Thermal Impedance
= 7 A
= 150°C
= 10V
= 10 V,
= 0
Min.
Min.
Typ.
Typ.
0.17
20
65
70
35
15
65
7
5
Max.
Max.
12
48
2
MTP3055E
Unit
Unit
nC
nC
nC
µC
ns
ns
ns
ns
ns
A
A
V
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