MT47H128M8CF-3:HTR Micron Technology Inc, MT47H128M8CF-3:HTR Datasheet - Page 45

• Manufacturer Part Number: MT47H128M8CF-3:HTR
• Manufacturer: Micron Technology Inc

Specifications of MT47H128M8CF-3:HTR

• Lead Free Status / Rohs Status: Compliant

ODT DC Electrical Characteristics
Table 14: ODT DC Electrical Characteristics
All voltages are referenced to V
PDF: 09005aef821ae8bf
1GbDDR2.pdf – Rev. V 6/10 EN
Parameter
R
EMR (A6, A2) = 0, 1
R
EMR (A6, A2) = 1, 0
R
EMR (A6, A2) = 1, 1
Deviation of VM with respect to V
TT
TT
TT
effective impedance value for 75Ω setting
effective impedance value for 150Ω setting
effective impedance value for 50Ω setting
Notes:
1. R
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
SS
being tested, and then measuring current, I(V
between –40°C and 0°C (T
DDQ
TT1(EFF)
/2
and R
TT2(EFF)
are determined by separately applying V
45
C
).
Symbol
R
R
R
TT1(EFF)
TT2(EFF)
TT3(EFF)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ODT DC Electrical Characteristics
1Gb: x4, x8, x16 DDR2 SDRAM
IH[AC]
Min
120
60
40
–6
), and I(V
Nom
150
75
50
–
IL[AC]
© 2004 Micron Technology, Inc. All rights reserved.
IH(AC)
Max
180
90
60
), respectively.
6
and V
Units
%
IL(DC)
Ω
Ω
Ω
to the ball
Notes
1, 2
1, 2
1, 2
3