TC7W126FUTE12LF Toshiba, TC7W126FUTE12LF Datasheet

TC7W126FUTE12LF

Manufacturer Part Number

TC7W126FUTE12LF

Description

Buffers & Line Drivers x34 3-STATE BUFFER

Manufacturer

Toshiba

Datasheet

1.TC7W126FUTE12LF.pdf (6 pages)

Specifications of TC7W126FUTE12LF

Logic Family

TC7W126FU

Logic Type

Dual Bus Buffer

Supply Voltage (max)

7 V

Supply Voltage (min)

- 0.5 V

Maximum Operating Temperature

+ 85 C

Mounting Style

SMD/SMT

Package / Case

SSOP-8

Maximum Power Dissipation

300 mW

Minimum Operating Temperature

- 40 C

Output Current

+/- 20 mA

Output Voltage

- 0.5 V to + 7.5 V

Propagation Delay Time

10 ns

Supply Current

20 uA

Lead Free Status / Rohs Status

Details

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Dual BUS Buffer

fabricated with silicon gate C

LSTTL while maintaining the C

output into the high impedance.

discharge or transient excess voltage.

Features

•

Absolute Maximum Ratings

The TC7W126FU is a high speed C

It achieves the high speed operation similar to equivalent

The require 3-state control input

All inputs are equipped with protection circuits against static

High speed: t

Low power dissipation: I

High noise immunity: V

Output drive capability: 15 LSTTL loads

Symmetrical output impedance: |I

Balanced propagation delays: t

Wide operating voltage range: V

Supply voltage range

DC input voltage

DC output voltage

Input diode current

Output diode current

DC output current

DC V

Power dissipation

Storage temperature range

Lead temperature (10 s)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

/ground current

Characteristics

= 10 ns (typ.) at V

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic

NIH

MOS technology.

= 2 μA (max) at Ta = 25°C

= V

MOS low power dissipation.

pLH

NIL

to be set low to place the

TC7W126FU

MOS Dual BUS Buffers

(Ta = 25°C)

∼ − t

(opr) = 2 to 6 V

= 28% V

Symbol

= 5 V

| = I

pHL

OUT

stg

= 6 mA (min)

(min)

−0.5 to V

−65 to 150

−0.5 to 7

Rating

±37.5

±20

±35

300

260

+ 0.5

Unit

°C

Weight: 0.02 g (typ.)

TC7W126FU

2009-09-30

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