BUK9Y19-55B/C2,115 NXP Semiconductors, BUK9Y19-55B/C2,115 Datasheet - Page 2

• Manufacturer Part Number: BUK9Y19-55B/C2,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1992pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
BUK9Y19-55B_3
Product data sheet
Pin
1
2
3
4
mb
Type number
BUK9Y19-55B
Symbol Parameter
V
V
V
I
I
P
T
T
Avalanche ruggedness
E
E
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
DS(AL)R
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
non-repetitive
drain-source avalanche
energy
repetitive drain-source
avalanche energy
source current
peak source current
Pinning
Symbol
S
S
S
G
D
Ordering information
Limiting values
Package
Name
LFPAK
Description
source
source
source
gate
mounting base;
connected to drain
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Conditions
T
R
T
T
T
T
I
T
see
T
t
D
p
j
mb
mb
mb
mb
j(init)
mb
GS
≤ 10 μs; pulsed; T
≥ 25 °C; T
= 46 A; V
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
Rev. 03 — 29 February 2008
sup
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 μs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
Figure 1
SOT669 (LFPAK)
Figure 1
1 2 3 4
Figure 4
GS
and
mb
= 5 V;
N-channel TrenchMOS logic level FET
4
[1][2]
[3]
BUK9Y19-55B
-15
-55
Min
-
-
-
-
-
-
-55
-
-
-
-
Graphic symbol
Max
55
55
15
46
32
184
85
175
175
80
-
46
184
mbb076
G
© NXP B.V. 2008. All rights reserved.
D
S
Version
SOT669
Unit
V
V
V
A
A
A
W
°C
°C
mJ
J
A
A
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