BUK9Y19-55B/C2,115 NXP Semiconductors, BUK9Y19-55B/C2,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y19-55B/C2,115
• Description: MOSFET N-CH 55V 46A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y19-55B/C2,115

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17.3 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 18nC @ 5V
• Input Capacitance (ciss) @ Vds: 1992pF @ 25V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: SC-100, SOT-669
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NXP Semiconductors
BUK9Y19-55B_3
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
60
40
20
44
36
28
20
12
0
V
T
function of gate-source voltage; typical values
of drain current; typical values
0
0
DS
j
= 25 °C
= 25V
3.2 3.4 3.6 3.8 4.0
1
T
40
T
j
T
= 175 °C
j
j
= 25 °C
= 25 °C
2
80
V
GS
5.0
3
I
(V) = 10
D
V
GS
(A)
03np27
03np30
(V)
Rev. 03 — 29 February 2008
120
4
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
2.4
1.6
0.8
0
0
−60
I
junction temperature
−60
a =
factor as a function of junction temperature
D
= 1 m A;V
R
DSon ( 25°C )
R
N-channel TrenchMOS logic level FET
DSon
DS
0
0
= V
GS
BUK9Y19-55B
60
60
max
min
typ
120
120
© NXP B.V. 2008. All rights reserved.
T
T
j
j
(°C)
(°C)
03ng52
03nb25
180
180
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