STI30N65M5 STMicroelectronics, STI30N65M5 Datasheet - Page 5
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STI30N65M5
Manufacturer Part Number
STI30N65M5
Description
MOSFET N-CH 650V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP30N65M5.pdf
(18 pages)
Specifications of STI30N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
139 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2880pF @ 100V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11330-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
STB/F/I/P/W30N65M5
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15331 Rev 2
I
I
V
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 22 A, V
= 22 A, di/dt = 100 A/µs
= 22 A, di/dt = 100 A/µs
= 4.7 Ω, V
= 60 V (see
= 60 V, T
= 400 V, I
Figure
Figure
Test conditions
Test conditions
21)
21)
GS
j
GS
D
= 150 °C
= 14 A,
= 0
= 10 V
Figure
21)
Electrical characteristics
Min.
Min.
-
-
-
-
-
Typ.
Typ.
336
395
32
34
50
50
10
6
7
8
Max. Unit
Max
1.5
22
88
-
Unit
nC
nC
ns
ns
ns
ns
ns
ns
5/18
A
A
V
A
A