STI30N65M5 STMicroelectronics, STI30N65M5 Datasheet - Page 8
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STI30N65M5
Manufacturer Part Number
STI30N65M5
Description
MOSFET N-CH 650V 22A I2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STP30N65M5.pdf
(18 pages)
Specifications of STI30N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
139 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
2880pF @ 100V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I²Pak, TO-262AA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11330-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/18
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Switching losses vs gate resistance
(norm)
V
GS(th)
1.00
0.80
0.70
1.10
0.90
(V)
V
1.2
1.0
0.2
0.8
0.6
0.4
(µJ)
250
200
150
100
300
SD
-50
0
50
E
0
0
0
vs temperature
characteristics
(1)
-25
T
J
=150°C
V
V
10
I
CL
D
GS
=14A
10
=400V
0
=10V
T
J
=-50°C
20
25
20
50
30
75
30
40
100
Eon
T
J
=25°C
40
50
T
J
Eoff
I
(°C)
SD
Doc ID 15331 Rev 2
AM05475v1
AM05473v1
AM05472v1
(A)
R
G
(Ω)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
DS(on)
1.07
1.03
0.99
0.97
0.95
1.05
1.01
0.93
DSS
1.5
1.3
1.1
0.9
0.7
0.5
2.1
1.9
1.7
-50
-50
temperature
-25
-25
0
0
25
25
50
VDSS
50
STB/F/I/P/W30N65M5
75
75
vs temperature
100
100
125
T
J
(°C)
AM05474v1
AM05467v1
T
J
(°C)