N25Q128A11BSF40F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BSF40F Datasheet - Page 131
N25Q128A11BSF40F
Manufacturer Part Number
N25Q128A11BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet
1.N25Q128A11B1241F.pdf
(185 pages)
Specifications of N25Q128A11BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.295", 7.50mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BSF40F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A11BSF40F
Manufacturer:
MICRON
Quantity:
1 200
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9.2.25
S
C
DQ0
DQ1
Figure 69. Write Volatile Enhanced Configuration Register instruction sequence
Deep Power-down (DP)
The Deep-Power-down (DP) instruction sets the device in Deep Power-down mode. Apart
form the parallelizing of the instruction code on the two pins DQ0 and DQ1, the instruction
functionality is exactly the same as the Deep Power-down (DP) instruction of the Extended
SPI protocol. The instruction sequence is shown in
sequence.
Figure 70. Deep Power-down instruction sequence
DQ0
DQ1
C
S
0
Instruction
1
DIO-SPI
2
3
0
Instruction
1
2
3
7
6
4
t
DP
Configuration Register In
5
4
5
Byte
Standby mode
Volatile Enhanced
3
2
6
1
0
Figure 70: Deep Power-down instruction
7
7
6
8
5
4
9 10 11
Deep power-down mode
Byte
Dual_Write_VECR
3
2
1
0
Dual_DP
131/185
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