N25Q128A11BSF40F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BSF40F Datasheet - Page 174
![no-image](/images/no-image-200.jpg)
N25Q128A11BSF40F
Manufacturer Part Number
N25Q128A11BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet
1.N25Q128A11B1241F.pdf
(185 pages)
Specifications of N25Q128A11BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.295", 7.50mm Width)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BSF40F
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A11BSF40F
Manufacturer:
MICRON
Quantity:
1 200
- Current page: 174 of 185
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Table 33.
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Typical values given for TA = 25 °C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to '1'.
6. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure)
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
174/185
tVPPHSL
tW
tCFSR
tWNVCR
tWVCR
tWRVECR
tPP
tSSE
tSE
tBE
Symbol
is known. Avoid applying VPPH to the W/VPP pin during Bulk Erase.
sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256).
(7)
(6)
AC Characteristics (page 2 of 2)
Figure 108. Reset AC waveforms: program or erase cycle is in progress
See
Reset
S
Alt.
Table 34.: Reset
Enhanced program supply voltage High
(VPPH) to Chip Select Low for Single and
Dual I/O Page Program
Write status register cycle time
Clear flag status register cycle time
Write non volatile configuration register
cycle time
Write volatile configuration register cycle
time
Write volatile enhanced
configurationregister cycle time
Page program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector erase cycle time
Sector erase cycle time
Bulk erase cycle time
Conditions.
Parameter
tSHRH
tRLRH
200
Min
tRHSL
1.3
40
0.2
40
40
int(n/8) ×
0.015
0.4
0.2
0.7
170
Typ
(8)
(2)
8
3
5
2
3
250
Max
AI06808
Unit
ms
ms
ms
ns
ns
ns
ns
s
s
s
s
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