MT41J512M4HX-125:D Micron Technology Inc, MT41J512M4HX-125:D Datasheet - Page 28
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT41J512M4HX-125:D
Manufacturer Part Number
MT41J512M4HX-125:D
Description
IC DDR3 SDRAM 2GBIT 78FBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT41J256M8JE-187EA.pdf
(181 pages)
Specifications of MT41J512M4HX-125:D
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (512M x 4)
Speed
800MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT41J512M4HX-125:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Thermal Characteristics
Table 8:
Figure 12: Thermal Measurement Point
PDF: 09005aef826aaadc/Source: 09005aef82a357c3
DDR3_D2.fm - Rev G 2/09 EN
Thermal Characteristics
Notes:
1. MAX operating case temperature. T
2. A thermal solution must be designed to ensure the DRAM device does not exceed the maxi-
3. Device functionality is not guaranteed if the DRAM device exceeds the maximum T
4. If T
5. The thermal resistance data is based off of a number of samples from multiple lots and
Parameter/Condition
Operating case temperature
Junction-to-case (TOP)
L
Figure 12).
mum T
operation.
interval refresh rate. The use of SRT or ASR (if available) must be enabled.
should be viewed as a typical number.
C
(L/2)
exceeds 85°C, the DRAM must be refreshed externally at 2X refresh, which is a 3.9µs
C
during operation.
W
28
78-ball “HX”
82-ball “JE”
96-ball “HA”
(W/2)
C
is measured in the center of the package (see
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T c test point
0 to 85
0 to 95
2Gb: x4, x8, x16 DDR3 SDRAM
Value
TBD
TBD
1.6
Thermal Characteristics
Units
°C/W
°C
°C
©2006 Micron Technology, Inc. All rights reserved.
Symbol
ΘJC
T
T
C
C
1, 2, 3, 4
C
Notes
1, 2, 3
during
5
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