N25Q128A11BF840F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BF840F Datasheet - Page 145

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N25Q128A11BF840F

Manufacturer Part Number
N25Q128A11BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet

Specifications of N25Q128A11BF840F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BF840F
N25Q128 - 1.8 V
Instructions
Figure 86. Program/Erase Suspend instruction sequence QIO-SPI
S
0
1
C
Instruction
DQ0
DQ1
DQ2
DQ3
Quad_Program_Erase_Suspend
9.3.12
Program/Erase Resume
After a Program/Erase suspend instruction, a Program/Erase Resume instruction is
required to continue performing the suspended Program or Erase sequence.
Apart form the parallelizing of the instruction code on the four pins DQ0, DQ1, DQ2 and
DQ3, the instruction functionality is exactly the same as the Program/Erase Resume (PER)
instruction of the Extended SPI protocol, please refer to
Section 9.1.21: Program/Erase
Resume
for further details.
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