N25Q128A11BF840F Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., N25Q128A11BF840F Datasheet - Page 33

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N25Q128A11BF840F

Manufacturer Part Number
N25Q128A11BF840F
Description
IC SRL FLASH 128MB NMX 8-VDFPN
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
Forté™r
Datasheet

Specifications of N25Q128A11BF840F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
1.7 V ~ 2 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-VDFPN
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
N25Q128A11BF840F
Figure 8.
A Flag Status Register (FSR), 8 bits, is also available to check the status of the device,
detecting possible errors or a Program/Erase internal cycle in progress.
Each register can be read and modified by means of dedicated instructions in all the 3
protocols (Extended SPI, DIO-SPI, and QIO-SPI).
Reading time for all registers is comparable; writing time instead is very different: NVCR bits
are set as Flash Cell memory content requiring a longer time to perform internal writing
cycles. See
Register download executed only
during the power on phase
(Non Volatile Configuratio n Register)
Table 33.: AC
Non Volatile and Volatile configuration Register Scheme
NVCR
Characteristics.
(internal Configuration Register)
Device behaviour
iCR
VCR
Co nfiguratio n Register)
and VECR
Registers download executed after
a WRVCR or WRVECR
instructions, it overwrites NVCR
configurations on iCR
(Volatile Co nfiguratio n Register)
(Volatile Enhanced
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