RC28F128J3D75D Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., RC28F128J3D75D Datasheet - Page 19

IC FLASH 128MBIT 75NS 64EZBGA

RC28F128J3D75D

Manufacturer Part Number
RC28F128J3D75D
Description
IC FLASH 128MBIT 75NS 64EZBGA
Manufacturer
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
Series
-r
Datasheet

Specifications of RC28F128J3D75D

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16Mx8, 8Mx16)
Speed
75ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
64-EZBGA
Lead Free Status / Rohs Status
Contains lead / RoHS non-compliant
Other names
872828
872828TR
872828TR
RC28F128J3D75 S L8QN
RC28F128J3D75D
RC28F128J3D75DTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RC28F128J3D75D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Table 6:
5.3.2
5.4
December 2007
316577-06
Power Supply
V
V
Voltage
V
CCQ(min)
PEN(min)
CC(min)
Power-Up/Down Sequence
† Power supplies connected or sequenced together.
Device inputs must not be driven until all supply voltages reach their minimum range.
RP# should be low during power transitions.
Power Supply Decoupling
When the device is enabled, many internal conditions change. Circuits are energized,
charge pumps are switched on, and internal voltage nodes are ramped. All of this
internal activities produce transient signals. The magnitude of the transient signals
depends on the device and system loading. To minimize the effect of these transient
signals, a 0.1 µF ceramic capacitor is required across each VCC/VSS and VCCQ signal.
Capacitors should be placed as close as possible to device connections.
Additionally, for every eight flash devices, a 4.7 µF electrolytic capacitor should be
placed between VCC and VSS at the power supply connection. This 4.7 µF capacitor
should help overcome voltage slumps caused by PCB trace inductance.
Reset
By holding the flash device in reset during power-up and power-down transitions,
invalid bus conditions may be masked. The flash device enters reset mode when RP# is
driven low. In reset, internal flash circuitry is disabled and outputs are placed in a high-
impedance state. After return from reset, a certain amount of time is required before
the flash device is able to perform normal operations. After return from reset, the flash
device defaults to asynchronous page mode. If RP# is driven low during a program or
erase operation, the program or erase operation will be aborted and the memory
contents at the aborted block or address are no longer valid. See
Waveform for Reset Operation” on page 29
timings.
2nd
1st
3rd
2nd
Power-UpSequence
1st
1st
2nd
Sequencing not
required
for detailed information regarding reset
2nd
3rd
1st
Power-Down Sequence
1st
2nd
Figure 14, “AC
2nd
1st
Sequencing not
required
Datasheet
19

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