RC28F128J3D75D Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC., RC28F128J3D75D Datasheet - Page 25

• Manufacturer Part Number: RC28F128J3D75D
• Description: IC FLASH 128MBIT 75NS 64EZBGA
• Manufacturer: Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC.
• Series: -r

Specifications of RC28F128J3D75D

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (16Mx8, 8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / Rohs Status: Contains lead / RoHS non-compliant
• Other names: 872828; 872828TR; 872828TR; RC28F128J3D75 S L8QN; RC28F128J3D75D; RC28F128J3D75DTR

Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 9:
Notes:
1.
2.
Figure 10: 4-Word Asynchronous Page Mode Read Waveform
Note:
December 2007
316577-06
Address [A]
Data [D/Q]
A[MAX:3] [A]
BYTE#[F]
WE# [W]
D[15:0] [Q]
OE# [G]
RP# [P]
CEx [E]
A[2:1] [A]
WE# [W]
OE# [G]
RP# [P]
CEx [E]
CE
CE0, CE1, or CE2 that disables the device (see
256-Mb” on page 31
When reading the flash array a faster t
query reads, or device identifier reads).
CE
CE0, CE1, or CE2 that disables the device (see
256-Mb” on page 31
X
X
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CE
Single Word Asynchronous Read Waveform
R6
R11
R7
).
).
R6
R5
R7
R5
R2
R3
R2
R16
R3
R4
R4
R12
00
GLQV
(R16) applies. For non-array reads, R4 applies (i.e., Status Register reads,
Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
1
R1
R1
R10
R1
R1
R13
R15
01
2
10
X
X
high is defined as the first edge of
high is defined as the first edge of
3
11
R10
R8
4
R9
R10
R9
R8
Datasheet
25