MT8VDDT6464HDY-40BJ1 Micron Technology Inc, MT8VDDT6464HDY-40BJ1 Datasheet

MT8VDDT6464HDY-40BJ1

Manufacturer Part Number

MT8VDDT6464HDY-40BJ1

Description

MODULE DDR SDRAM 512MB 200SODIMM

Manufacturer

Micron Technology Inc

Series

-r

Datasheets

1.MT8VDDT6464HDY-40BJ1.pdf (13 pages)

2.MT8VDDT6464HDY-40BJ1.pdf (30 pages)

Specifications of MT8VDDT6464HDY-40BJ1

Memory Type

DDR SDRAM

Memory Size

512MB

Speed

400MT/s

Features

Package / Case

200-SODIMM

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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DDR SDRAM SODIMM

MT8VDDT3264HD – 256MB

MT8VDDT6464HD – 512MB

For component data sheets, refer to Micron’s Web site:

Features

• 200-pin, small-outline dual in-line memory module

• Fast data transfer rates: PC2100, PC2700, or PC3200

• 256MB (32 Meg x 64), 512MB (64 Meg x 64)

• V

• 2.5V I/O (SSTL_2-compatible)

• Internal, pipelined double data rate (DDR)

• Bidirectional data strobe (DQS) transmitted/

• Differential clock inputs (CK and CK#)

• Multiple internal device banks for concurrent

• Selectable burst lengths (BL): 2, 4, or 8

• Auto precharge option

• Auto refresh and self refresh modes: 7.8125µs

• Serial presence-detect (SPD) with EEPROM

• Selectable CAS latency (CL) for maximum

• Dual rank

• Gold edge contacts

Table 1:

PDF: 09005aef80765fab/Source: 09005aef806e1d28

DD8C32_64x64HD.fm - Rev. E 11/08 EN

(SODIMM)

(-40B: V

architecture; two data accesses per clock cycle

received with data—that is, source-synchronous

data capture

operation

maximum average periodic refresh interval

compatibility

DDSPD

Speed

Grade

-26A

-40B

-335

-265

= V

= +2.3V to +3.6V

Q = +2.5V

= V

Key Timing Parameters

Products and specifications discussed herein are subject to change by Micron without notice.

Nomenclature

Notes:

Q = +2.6V)

Industry

PC3200

PC2700

PC2100

1. The values of

actual DDR SDRAM device specifications are 15ns.

CL = 3

400

–

256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM

RCD and

Data Rate (MT/s)

CL = 2.5

www.micron.com

RP for -335 modules show 18ns to align with industry specifications;

333

266

Figure 1:

Notes: 1. Not recommended for new designs.

Options

• Operating temperature

• Package

• Memory clock, speed, CAS latency

PCB height: 31.75mm (1.25in)

– Commercial (0°C ≤ T

– Industrial (–40°C ≤ T

– 200-pin DIMM (standard)

– 200-pin DIMM (lead-free)

– 5.0ns (200 MHz), 400 MT/s, CL = 3

– 6.0ns (167 MHz), 333 MT/s, CL = 2.5

– 7.5ns (133 MHz), 266 MT/s, CL = 2

– 7.5ns (133 MHz), 266 MT/s, CL = 2.5

CL = 2

266

200

Micron Technology, Inc., reserves the right to change products or specifications without notice.

2. Contact Micron for industrial temperature

module offerings.

200-Pin SODIMM (MO-224)

(ns)

RCD

≤ +85°C)

≤ +70°C)

(ns)

Marking

Features

None

-40B

-26A

-335

-265

Notes

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