MT8VDDT6464HDY-40BJ1 Micron Technology Inc, MT8VDDT6464HDY-40BJ1 Datasheet - Page 7

• Manufacturer Part Number: MT8VDDT6464HDY-40BJ1
• Description: MODULE DDR SDRAM 512MB 200SODIMM
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT8VDDT6464HDY-40BJ1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Features: -
• Package / Case: 200-SODIMM
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 7:
PDF: 09005aef80765fab/Source: 09005aef806e1d28
DD8C32_64x64HD.fm - Rev. E 11/08 EN
V
Symbol
IN
V
, V
I
T
OZ
DD
I
A
I
OUT
Absolute Maximum Ratings
Parameter
V
Voltage on any pin relative to V
Input leakage current; Any input 0V ≤ V
V
test = 0V)
Output leakage current; 0V ≤ V
disabled
DRAM ambient operating temperature
REF
DD
supply voltage relative to V
Notes:
input 0V ≤ V
Stresses greater than those listed in Table 7 may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated on the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may adversely
affect reliability.
1. For further information, refer to technical note
on Micron’s Web site.
IN
≤ 1.35V (All other pins not under
256MB, 512MB (x64, DR): 200-Pin DDR SDRAM SODIMM
OUT
SS
SS
≤ V
DD
1
IN
Q; DQ are
≤ V
DD
7
;
Address inputs,
RAS#, CAS#, WE#, BA
CK, CK#, S#, CKE
DM
DQ, DQS
Commercial
Industrial
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TN-00-08: “Thermal
Electrical Specifications
Min
–1.0
–0.5
©2004 Micron Technology, Inc. All rights reserved.
–16
–10
–40
–8
–4
0
Applications,” available
Max
+3.6
+3.2
+16
+10
+70
+85
+8
+4
Units
µA
µA
°C
°C
V
V