MT8VDDT6464HDY-40BJ1 Micron Technology Inc, MT8VDDT6464HDY-40BJ1 Datasheet - Page 18
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MT8VDDT6464HDY-40BJ1
Manufacturer Part Number
MT8VDDT6464HDY-40BJ1
Description
MODULE DDR SDRAM 512MB 200SODIMM
Manufacturer
Micron Technology Inc
Series
-r
Specifications of MT8VDDT6464HDY-40BJ1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Features
-
Package / Case
200-SODIMM
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12–15, 29, 49
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command
interval
Average periodic refresh
interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
AC CHARACTERISTICS
PARAMETER
;
notes appear on pages 19–22; 0°C ≤ T
DD
128MB
256MB,
512MB
128MB
256MB,
512MB
t
t
t
t
t
t
WPRES
t
t
t
SYM
WPRE
t
WPST
t
t
XSNR
XSRD
RPRE
REFC
RPST
t
WTR
RRD
REFI
VTD
WR
na
MIN
0.25
t
200
0.9
0.4
0.4
12
15
75
QH -
0
1
0
18
-335
A
t
DQSQ
≤ +70°C; V
128MB, 256MB, 512MB (x64, SR)
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
MIN
0.25
t
200
0.9
0.4
0.4
QH -
DD
15
15
75
0
1
0
-262
= V
t
DQSQ
DD
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
Q = +2.5V ±0.2V
MIN
0.25
t
200
0.9
0.4
0.4
QH -
15
15
75
-26A/-265
0
1
0
t
DQSQ
MAX
140.6
70.3
15.6
1.1
0.6
0.6
7.8
UNITS
©2004 Micron Technology. Inc.
t
t
t
t
t
t
CK
CK
ns
CK
ns
CK
ns
CK
ns
µs
µs
µs
µs
ns
ns
CK
NOTES
18, 19
38
38
17
22
21
21
21
21