933567130112 NXP Semiconductors, 933567130112 Datasheet - Page 3
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933567130112
Manufacturer Part Number
933567130112
Description
Manufacturer
NXP Semiconductors
Datasheet
1.933567130112.pdf
(6 pages)
Specifications of 933567130112
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
40V
Emitter-base Voltage
10V
Base-emitter Saturation Voltage (max)
1.5V
Collector-emitter Saturation Voltage
1V
Collector Current (dc) (max)
500mA
Dc Current Gain
30000
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
SPT
Lead Free Status / Rohs Status
Compliant
Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Nov 05
handbook, full pagewidth
R
I
I
h
V
V
V
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BEon
th(j-a)
NPN Darlington transistor
V
80000
60000
40000
20000
CE
h FE
= 25 C unless otherwise specified.
= 2 V.
0
10
1
thermal resistance from junction to ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
1
Fig.2 DC current gain; typical values.
V
V
V
I
I
V
V
f = 100 MHz
C
C
CB
EB
CE
CE
CE
= 100 mA; I
= 100 mA; I
= 10 V; I
= 30 V; I
= 2 V; I
= 5 V; I
= 5 V; I
3
10
CONDITIONS
C
C
C
note 1
C
E
= 20 mA; see Fig.2 30000
= 30 mA;
= 10 mA
B
B
= 0 A
= 0 A
CONDITIONS
= 0.1 mA
= 0.1 mA
10
2
MIN.
VALUE
200
I C (mA)
220
TYP.
Product specification
100
100
1
1.5
1.4
MAX.
MGD837
BC517
UNIT
K/W
10
3
nA
nA
V
V
V
MHz
UNIT