M25P64-VME6TG Micron Technology Inc, M25P64-VME6TG Datasheet - Page 45

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M25P64-VME6TG

Manufacturer Part Number
M25P64-VME6TG
Description
Manufacturer
Micron Technology Inc
Datasheets

Specifications of M25P64-VME6TG

Cell Type
NOR
Density
64Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Boot Type
Not Required
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFPN EP
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
8M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant

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Table 17.
1. Technology T9HX devices are identified by process identification digit "4" in the device marking.
2. Typical values given for T
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
7. V
8. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
9. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 21. Serial input timing
Symbol
known. Avoid applying V
sequence including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
CH
t
t
PPH
SE
BE
+ t
should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
CL
S
C
D
Q
must be greater than or equal to 1/ f
AC characteristics, T9HX parts (page 2 of 2)
Alt.
tCHSL
Sector erase cycle time
Bulk erase cycle time
tDVCH
PPH
A
= 25° C.
to the W/VPP pin during Bulk Erase.
Test conditions specified in
High Impedance
MSB IN
tSLCH
Parameter
C
tCHDX
.
Table 10
tCLCH
(1)
tCHSH
Min
and
LSB IN
Table 12
Typ
tCHCL
0.7
tSHSL
68
(2)
tSHCH
AI01447C
Max
160
3
Unit
45/55
s
s

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