APT100GT60JR MICROSEMI, APT100GT60JR Datasheet

APT100GT60JR

Manufacturer Part Number
APT100GT60JR
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of APT100GT60JR

Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
148A
Gate To Emitter Voltage (max)
±30V
Package Type
SOT-227
Pin Count
4
Mounting
Screw
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT100GT60JR
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT100GT60JR
Manufacturer:
ASTEC
Quantity:
560
Part Number:
APT100GT60JRDQ4
Manufacturer:
Microsemi Power Products Group
Quantity:
135
The Thunderblot IGBT
Through Technology, the Thunderblot IGBT
switching speed.
• Low Forward Voltage Drop
• Low Tail Current
• RBSOA and SCSOA Rated
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
P
CES
GES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
is a new generation of high voltage power IGBTs. Using Non- Punch
Thunderbolt IGBT
1
(V
• High Freq. Switching to 80KHz
• Ultra Low Leakage Current
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 600V, V
= 600V, V
®
GE
GE
C
C
offers superior ruggedness and ultrafast
GE
GE
J
= 25°C
= 100°C
= 15V, I
= 15V, I
= 150°C
, I
= ±30V)
C
GE
= 1.5mA, T
GE
GE
C
C
= 0V, I
= 0V, T
= 0V, T
= 100A, T
= 100A, T
®
C
j
j
j
= 4mA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specifi ed.
MIN
600
1.7
3
APT100GT60JR
300A @ 600V
-55 to 150
600
±30
148
300
500
300
TYP
2.1
2.5
80
APT100GT60JR
4
ISOTOP
G
APT100GT60JR
MAX
TBD
300
2.5
25
5
600V
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA

Related parts for APT100GT60JR

APT100GT60JR Summary of contents

Page 1

... ±30V) GE Microsemi Website - http://www.microsemi.com APT100GT60JR 600V APT100GT60JR "UL Recognized" file # E145592 ISOTOP ® 25°C unless otherwise specifi ed. C UNIT APT100GT60JR 600 Volts ±30 148 80 Amps 300 300A @ 600V 500 Watts -55 to 150 °C 300 MIN TYP MAX Units 600 ...

Page 2

... 4.3Ω +25° Inductive Switching (125° 400V 15V 100A 4.3Ω +125° APT100GT60JR MIN TYP MAX 5430 508 312 8.0 460 40 210 = GE 300 = 600V 40 75 320 100 3250 3525 3125 40 75 350 100 3275 4650 3750 MIN TYP MAX ...

Page 3

... T = 25°C. J 3.5 3 2.5 2 1 FIGURE 6, On State Voltage vs Junction Temperature 200 180 160 140 120 100 100 125 150 -50 -25 FIGURE 8, DC Collector Current vs Case Temperature APT100GT60JR 12, 13, &15V 10V COLLECTER-TO-EMITTER VOLTAGE ( 125° 100A 25° 120V 300V 480V CE 100 ...

Page 4

... G 12000 E 200A off, 10000 8000 6000 E 100A 4000 on2, 100A 2000 E 50A off JUNCTION TEMPERATURE (°C) J FIGURE 16, Switching Energy Losses vs Junction Temperature APT100GT60JR =25° =15V,T =125° 100 125 150 175 200 225 = = 100 H, V 400V µ 125°C, V 15V 25° ...

Page 5

... RECTANGULAR PULSE DURATION (SECONDS) 100 50 T (° 0.0587 5 4.48 ° 125 400V 4.3Ω COLLECTOR CURRENT (A) C Figure 20, Operating Frequency vs Collector Current APT100GT60JR 100 200 300 400 500 600 700 , COLLECTOR TO EMITTER VOLTAGE CE Note Duty Factor Peak θ 1.0 10 ° min (f max ...

Page 6

... W=4.3 (.169) 8.2 (.322) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) * Emitter * Emitter Dimensions in Millimeters and (Inches) APT100GT60JR Gate Voltage 10% t d(on 90% Collector Current 5% 5% 10% CollectorVoltage Switching Energy 11.8 (.463) 12 ...

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